Amorphous Silicon Deposition
In addition to LPCVD and high temperature processes, SiFusion furnaceware is ideally suited to amorphous silicon deposition.
SiFusion’s ionically pure material does not add particles in the amorphous silicon deposition, allowing the active layer to meet the strict criteria for thin-film transistors.
Wafers are easily contaminated by furnace fixtures’ corrosion and deformation during heating. SiFusion furnaceware can withstand thermal shock at temperatures far above those experienced by IC wafers. Its surface treatment diffuses stress to prevent flaking, maintaining a clean environment around the wafer.