A High Strength Structural Material with Excellent High-Temperature Stability
Pure poly silicon is the ideal material for use in semiconductor thermal processes. Neither quartz nor silicon carbide can match the purity or the improved process results achieved by SiFusion’s poly silicon products.
Poly silicon is a high strength structural material with excellent high-temperature stability. It is ideal for extremely high furnace temperatures because, unlike silicon carbide, it is non-porous and non-absorbing, and because its Coefficient of Thermal Expansion matches that of the wafer. Additionally, poly silicon’s elemental purity is measured in parts per billion and parts per trillion, compared to quartz and silicon carbide, which are measured for purity in parts per million.
Silicon is a naturally occurring element in the earth’s crust. Its conductivity properties make it an ideal semiconducting material, and it is the primary material used in semiconductor wafers up to 300 mm in diameter.
Put head-to-head with silicon carbide and quartz, poly silicon’s physical characteristics create a significant competitive advantage in the furnace environment.