Ideal Conductivity

Silicon is a naturally occurring element in the earth’s crust. Its conductivity properties make it an ideal semiconducting material, and it is the primary material used in semiconductor wafers up to 300 mm in diameter.

The polycrystalline silicon in SiFusion is elemental silicon in a non-oriented crystalline form.

Physical Properties of Silicon

Identification Silicon
Symbol Si
State (std. cond.) Solid
Atomic 28.086
Melting point, °C 1,414
Boiling point, °C 2,878
Critical temperature, °C 4,886
Critical pressure, atm 530
Critical volume, cm3/gmol 232.6
Critical density, g/cm3 0.1207
Vapor pressure, mm Hg 2.8(10-4) (at m.p.)
Heat of vaporization, cal/g 3,812 (at m.p.)
Heat of sublimation, cal/g 4,705 (at m.p.)
Heat of fusion, cal/g 264 (at m.p.)
Liquid heat cap., cal/g mol °C 6.755 (at m.p.)
Solid heat cap., cal/g mol °C 4.78 (at 25°C)
Solid heat Cap., JKg/m mol (at 25°C) 703
Liquid density 2.533 (at m.p.)
Solid density 2.329 (at 25°C)
Percent expansion on freezing 10% (at m.p.)
Surface T 736 (at m.p.)
Liquid viscosity 0.88 (at m.p.)
Liquid thermal cond., cal/sec cm°C 1.025 (10-3) (at m.p.)
Solid thermal cond., cal/sec cm°C 0.353 (at 25°C)
Solid thermal cond., W/m 163
Hardness, knops Kg/mm 1150
Hardness, mobs 7
Bulk modules, dyne/cm2 9.8 (1011)
Bulk modules, Gpa 102
Young modulus, dyne/cm2 1.3 (1012)
Young modulus, Gpa 131
Coefficient of thermal expansion m/°C 2.6 (10-6)
Specific heat, cal/g °C 0.18
Atomic density, atom cm2 4.96 (1022)
Refractive index, 4µ 3.4255
dn/dt °C 1.6 (10-4)
Percent transmission uncoated, 4µ 53.8
Transmission range, µ 1.2-7 & 45-100
Dielectric 11.8
Elastic constant, C11 dyne/cm2 1.656 (1012)
Elastic constant, C12 dyne/cm2 0.639 (1012)
Elastic constant, C14 dyne/cm2 0.795 (1012)
Rupture modules, bending, kg/cm2 700-3,500
Breaking strength, compression kg/cm2 4,900-5,600
Breaking strength, compression Mpa 120
Poisson ratio 0.28

Additional resources for Silicon Science:

SiFusion furnaceware is clean to <1.0 E10 / cm2 for all trace metals.

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